Processing and device issues in GaN and related compounds

Author

Adesida, Ilesanmi

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana-Champaign, IL

fYear

2005

fDate

15-15 April 2005

Firstpage

8

Lastpage

9

Abstract

In this talk, we describe our work on photoelectrochemical (PEC) etching of GaN as a tool for material characterization and device fabrication. Revelations of defect structures especially edge and screw dislocations in n-GaN were discussed. We also describe our work on developing thermally stable ohmic and Schottky contacts, inductively-coupled-plasma reactive ion etching (ICP-RIE) for device fabrication. Lastly, results on DC, RF, CW power and microwave noise for AlGaN/GaN HFETs were presented and discussed in the context of GaN material quality

Keywords

III-V semiconductors; Schottky barriers; aluminium compounds; dislocation etching; gallium compounds; ohmic contacts; photoelectrochemistry; sputter etching; wide band gap semiconductors; AlGaN-GaN; HFET; Schottky contacts; defect structures; device fabrication; inductively-coupled-plasma reactive ion etching; material characterization; material quality; microwave noise; photoelectrochemical etching; screw dislocations; thermally stable ohmic contacts; Aluminum gallium nitride; Etching; Fabrication; Fasteners; Gallium nitride; HEMTs; MODFETs; Microwave devices; Radio frequency; Schottky barriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices, 2005. WMED '05. 2005 IEEE Workshop on

Conference_Location

Boise, ID

Print_ISBN

0-7803-9072-5

Type

conf

DOI

10.1109/WMED.2005.1431599

Filename

1431599