DocumentCode
3209798
Title
A new fully differential second generation current controlled convey or using FG-MOS
Author
Fani, Rezvan ; Farshidi, Ebrahim
Author_Institution
Electr. Dept., Shahid Chamran Univ., Ahwaz, Iran
fYear
2012
fDate
15-17 May 2012
Firstpage
17
Lastpage
20
Abstract
This paper presents a new fully differential current controlled conveyor (FDCCCII) based on differential pair topology, which employs floating gate MOS transistors (FG-MOS). It uses floating gate MOSFETs at the input stage and has rail to rail structure. It operates with low supply voltage (±0.8v), low power consumption (lower than 600μw), and with wide range parasitic resistance (Rx). Simulation results by Hspice confirm validity of the proposed circuit.
Keywords
MOSFET; SPICE; current conveyors; FG-MOS; Hspice; differential pair topology; floating gate MOS transistor; floating gate MOSFET; fully differential current controlled conveyor; fully differential second generation current controlled convey; parasitic resistance; Logic gates; Rails; current conveyor; current-mode; floating gate MOS; fully differential;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering (ICEE), 2012 20th Iranian Conference on
Conference_Location
Tehran
Print_ISBN
978-1-4673-1149-6
Type
conf
DOI
10.1109/IranianCEE.2012.6292314
Filename
6292314
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