Unique technique to suppress reverse short channel effects in sub-micron CMOS devices

Experimental evidence is presented that validates the necessary conditions for the occurrence of the reverse short-channel effect (RSCE) in submicron MOSFET´s. These conditions include a retrograde dopant profile in the channel and damage from post gate-edge oxidations and source-drain implants, which in turn, causes point defect enhanced diffusion of the channel dopants toward the silicon/oxide interface. Process improvements are presented including channel doping profile engineering, and proper placement of rapid thermal anneals to reduce localized transient enhanced diffusion of channel dopants reducing RCSE in both NMOS and PMOS devices