300 mm megasonic cleaning process to address material consumption requirements for sub-65nm

This paper presents an alternative low temperature (>30degC) SCI cleaning process for 300mm wafers targeted towards next generation devices. By modifying the amount of time the wafer surface is exposed to the air, liquid, gas interface and applying mega sonic energy, we are able to take advantage of the energy transfer to the surface of the wafer more efficiently. This allows for process times for 50 wafer batches of approximately 1.5 minutes as opposed to a standard elongated process times while maintaining acceptable particle removal efficiency (PRE). The effect of the mega sonic power on the PRE during this process was investigated as well. Particle removal efficiencies of greater than 90% at 90 nm were obtained for all power levels tested. The corresponding etch rate is less than 0.1 Aring per minute for SiO₂ making this process acceptable for future technology nodes