Title :
A 3-ppm/°C bandgap voltage reference using MOSFETs in strong inversion region
Author :
Shami, E. ; Shamsi, H.
Author_Institution :
Electr. & Comput., K.N. Toosi Univ. of Technol., Tehran, Iran
Abstract :
An accurate bandgap voltage reference (BVR) which utilizes the thermal behavior of the threshold voltage and electron mobility of NMOS transistors is presented in this paper. The circuit is based on a well-known addition of a proportional to absolute temperature (PTAT) and complementary to absolute temperature (CTAT) references. The PTAT circuit uses the temperature coefficient (TC) of the electron mobility and the CTAT circuit uses the TC of the threshold voltage to generate accurate PTAT and CTAT currents. The circuit is designed in a 0.18μm CMOS technology. Simulation results show a temperature coefficient (TC) of 3ppm and power supply rejection ratio (PSRR) of 77dB at DC frequency.
Keywords :
CMOS analogue integrated circuits; MOSFET; electron mobility; BVR; CMOS technology; CTAT circuit; DC frequency; MOSFET; NMOS transistors; PTAT circuit; bandgap voltage reference; complementary-to-absolute temperature reference; electron mobility; inversion region; power supply rejection ratio; proportional-to-absolute temperature reference; size 0.18 mum; temperature coefficient; thermal behavior; threshold voltage; CMOS integrated circuits; CMOS technology; Bandgap Voltage Reference (BVR); High PSRR; Low TC; Strong Inversion Region;
Conference_Titel :
Electrical Engineering (ICEE), 2012 20th Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4673-1149-6
DOI :
10.1109/IranianCEE.2012.6292321
