• DocumentCode
    3210044
  • Title

    Open aperture microgated carbon nanotube FEAs

  • Author

    Hsu, David S.Y. ; Shaw, Jonathan L.

  • Author_Institution
    Naval Res. Lab., Washington
  • fYear
    2007
  • fDate
    8-12 July 2007
  • Firstpage
    80
  • Lastpage
    81
  • Abstract
    We grew the CNT inside 1.5 mum diameter open apertures lined with 0.25 mum of SiO2 using DC plasma chemical vapor deposition (CVD) The oxide liner helped position the CNTs in the center of the cells and reduced the gate current by preventing the carbon nanotubes from contacting the gate. The concave-up curvature of the Fowler-Nordheim plot is probably caused by emission from CNTs with different field enhancement, due to varying diameters, lengths, and tips per aperture. We operated one array for six days at 65 V; after the first 24 hrs the current stabilized and remained above 200 muA. The likely causes for the initial drop include the evaporation and blunting of very thin CNTs by field desorption and the desorption of H2O.
  • Keywords
    carbon nanotubes; field emitter arrays; plasma CVD; silicon compounds; C; DC plasma chemical vapor deposition; Fowler-Nordheim plot; SiO2; carbon nanotube field emitter arrays; carbon nanotubes growth; field desorption; open aperture microgated CNT FEA; size 0.25 mum; size 1.5 mum; time 24 h; voltage 65 V; Anodes; Apertures; Carbon nanotubes; Current measurement; Electron emission; Etching; Plasma applications; Plasma measurements; Voltage; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
  • Conference_Location
    Chicago, IL
  • Print_ISBN
    978-1-4244-1133-7
  • Electronic_ISBN
    978-1-4244-1134-4
  • Type

    conf

  • DOI
    10.1109/IVNC.2007.4480941
  • Filename
    4480941