Title :
Design of low-voltage low-power Dual-Band LNA with using DS method to improve linearity
Author :
Dehqan, Ali Reza ; Kenarroodi, Moosa ; Kargaran, Ehsan ; Mafinezhad, Khalil
Author_Institution :
Sadjad Inst. for Higher Educ., Mashhad, Iran
Abstract :
In this paper a low-voltage low-power Concurrent Dual-Band Low Noise Amplifier (LNA) with linearity improvement technique is presented. By using advantageous of current reuse (CR) topology and forward body biasing (FBB) technique the proposed LNA can operate at a reduce supply voltage and power consumption. The liberalized LNA´s is achieved using auxiliary transistor and utilizing derivative superposition (DS) method. Using TSMC 0.18um process, the IIP3 is improved more than 50%, with the cost of decrease 2dB gain for each band. LNA is designed at 2.4GHz and 5.2GHz for IEEE802.11a/b/g application with 2.89mW power consumption and 0.7V supply voltage.
Keywords :
UHF amplifiers; UHF transistors; low noise amplifiers; low-power electronics; microwave amplifiers; microwave transistors; CR topology; DS method; FBB technique; IEEE802.11a/b/g application; TSMC process; auxiliary transistor; current reuse topology; derivative superposition method; forward body biasing technique; frequency 2.4 GHz; frequency 5.2 GHz; gain 2 dB; linearity improvement technique; low-voltage low-power concurrent dual-band low noise amplifier; low-voltage low-power dual-band LNA design; power 2.89 mW; size 0.18 mum; voltage 0.7 V; Abstracts; Dual band; Junctions; Limiting; Linearity; Noise measurement; Switching circuits; Dual-Band Low Noise Amplifier; Low voltage; derivative superposition; forward body biasing; linearity;
Conference_Titel :
Electrical Engineering (ICEE), 2012 20th Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4673-1149-6
DOI :
10.1109/IranianCEE.2012.6292329