DocumentCode :
3210148
Title :
CMOS fast transient low-dropout regulator
Author :
Saberkari, Alireza ; Alarcon, Eduard ; Shokouhi, Shahriar B.
Author_Institution :
Dept. of Electr. Eng., Univ. of Guilan, Rasht, Iran
fYear :
2012
fDate :
15-17 May 2012
Firstpage :
105
Lastpage :
108
Abstract :
In this paper a fast transient response CFA-based low-dropout regulator (LDO) is introduced. The circuit is stable for 0-100mA output load current and a 1μF output capacitor without any internal compensation. The CFA consists of a voltage follower with output local current-current feedback based on a level-shifted flipped voltage follower (LSFVF) which is instrumental to achieve high regulation and fast transient response. The inverting output buffer stage of the CFA together with current-mirror-based driving of the pass transistor results in high PSRR. Full transistor-level simulation results for an AMS 0.35μm CMOS process design reveal that the proposed LDO dissipates 58μA quiescent current at no-load condition and in worst case conditions has a current efficiency of 99.8%. For a 1μF output capacitor, the maximum output voltage variation to a 0-100mA load transient with rise and fall time of 10 and 100ns is only 2.5mV, and the PSRR is smaller than -58dB over the entire load current range.
Keywords :
CMOS analogue integrated circuits; current mirrors; operational amplifiers; transient response; AMS CMOS process design; CMOS fast transient low-dropout regulator; LSFVF; capacitance 1 muF; current 0 mA to 100 mA; current efficiency; current mirror-based driving; efficiency 99.8 percent; fast transient response CFA-based LDO regulator; full-transistor-level simulation; inverting output buffer stage; level-shifted flipped voltage follower; output capacitor; output load current; output local current-current feedback; pass transistor; size 0.35 mum; time 10 ns; time 100 ns; voltage 2.5 mV; CMOS integrated circuits; CMOS technology; Capacitors; Instruments; fast transient; level-shifted flipped voltage follower; low-dropout;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering (ICEE), 2012 20th Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4673-1149-6
Type :
conf
DOI :
10.1109/IranianCEE.2012.6292333
Filename :
6292333
Link To Document :
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