DocumentCode :
3210222
Title :
Modelling of Thin Film Transistors for Circuit Simulation
Author :
Iñiguez, B. ; Picos, R. ; Estrada, M. ; Cerdeira, A. ; Ytterdal, T.A. ; Jackson, W. ; Koudymov, A. ; Veksler, D. ; Shur, M.S.
Author_Institution :
Univ. Rovira i Virgili, Tarragona
fYear :
2007
fDate :
21-23 June 2007
Firstpage :
35
Lastpage :
40
Abstract :
We review recent physics-based, compact models for thin film transistors (TFTs), including amorphous (a-Si), polysilicon (poly-Si), nanocrystalline silicon (nc-Si), and organic TFTs. The models accurately reproduce the DC characteristics for different geometries. We also present a universal TFT model paradigm, which allows to obtain a suitable estimation of TFT characteristics using only eight parameters, which are very easy to extract. This universal TFT model is used for the first iteration step in complete models adapted to each type of device.
Keywords :
amorphous semiconductors; circuit simulation; semiconductor device models; silicon; thin film transistors; TFT model paradigm; amorphous; circuit simulation; nanocrystalline silicon; organic TFT; polysilicon; thin film transistors; Active matrix liquid crystal displays; Amorphous materials; Circuit simulation; Crystalline materials; Crystallization; Parameter extraction; Radiofrequency identification; Silicon; Temperature; Thin film transistors; Compact modelling; Organic devices; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mixed Design of Integrated Circuits and Systems, 2007. MIXDES '07. 14th International Conference on
Conference_Location :
Ciechocinek
Print_ISBN :
83-922632-9-4
Electronic_ISBN :
83-922632-9-4
Type :
conf
DOI :
10.1109/MIXDES.2007.4286117
Filename :
4286117
Link To Document :
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