Title :
Low-voltage high-performance silicon RF power transistors
Author :
Versleijen, M. ; Dekker, Ronald ; v.d.Einde, W. ; Pruijmboom, Armand
Author_Institution :
Philips Semiconductors, Nijmegen, Netherlands
Abstract :
The high-frequency power performance of mounted discrete silicon bipolar transistors, that have been optimised for low-voltage application, has been evaluated. At 1.8 GHz and 3.5 V a power gain of 14 dB and a power-added efficiency of 60% at an RF power density of 1 W/mm emitter length have been measured. These results demonstrate that also at low supply voltages silicon BJTs have excellent power amplifying capabilities.<>
Keywords :
UHF bipolar transistors; elemental semiconductors; power bipolar transistors; silicon; 1.8 GHz; 14 dB; 3.5 V; 60 percent; BJT; LV operation; RF power transistors; Si; UHF power performance; low-voltage application; power amplifying capabilities; Bipolar transistors; Density measurement; Feedback; Inductance; Laboratories; Low voltage; Performance gain; Power transistors; Radio frequency; Silicon;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406024
