Title :
Improvement of emission efficiency of nanocrystalline silicon planar cathodes
Author :
Shimawaki, Hidetaka ; Neo, Yoichiro ; Mimura, Hidenori ; Murakami, Katsuhisa ; Wakaya, Fujio ; Takai, Mikio
Author_Institution :
Hachinohe Inst. of Technol., Hachinohe
Abstract :
In this paper, in order to improve the emission efficiency and understand the emission mechanism MOS cathodes are fabricated based on nanocrystalline Si (nc-Si) prepared by a pulsed laser ablation (PLA) technique and investigated their emission properties. The cathode is composed of nc-Si covered with a thin oxide film sandwiched between an n-type silicon substrate as an electron source and a thin top electrode. The emission area of the cathode was designed 500 mum in diameter. The emission characteristics of the nc-Si MOS cathode were measured in a vacuum of 10-5 pa.
Keywords :
MIS structures; cathodes; elemental semiconductors; fluorescence; nanostructured materials; nanotechnology; photoluminescence; pulsed laser deposition; silicon; MOS cathode; Si; emission efficiency; nanocrystalline silicon planar cathodes; pulsed laser ablation technique; silicon substrate; size 500 mum; Cathodes; Electrodes; Electron sources; Laser ablation; Mechanical factors; Optical pulses; Programmable logic arrays; Semiconductor films; Silicon; Substrates;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4244-1133-7
Electronic_ISBN :
978-1-4244-1134-4
DOI :
10.1109/IVNC.2007.4480953
