• DocumentCode
    3210336
  • Title

    Experiments and Modeling of Dynamic Floating Body Effects in 1T-Dram Fully Depleted SOI Devices

  • Author

    Bawedin, M. ; Cristoloveanu, S. ; Dessard, V. ; Flandre, D.

  • Author_Institution
    Catholic Univ. of Louvain-la-Neuve, Louvain-la-Neuve
  • fYear
    2007
  • fDate
    21-23 June 2007
  • Firstpage
    84
  • Lastpage
    88
  • Abstract
    We describe the transient floating-body mechanism which occurs in fully depleted SOI transistors and leads to a memory effect. A physics-based model for the potential variation with time is proposed and validated by numerical simulations. This model reproduces and clarifies the operation of the novel capacitor-less MSDRAM, the properties of which are discussed.
  • Keywords
    DRAM chips; MOSFET; integrated circuit modelling; silicon-on-insulator; 1T-DRAM; SOI MOSFET; Si-SiO2; capacitor-less MSDRAM; dynamic floating body effects; fully depleted SOI devices; memory effect; physics-based model; Analog circuits; Bipolar transistors; Hysteresis; Immune system; Latches; MOSFETs; Numerical simulation; Random access memory; Threshold voltage; Tunneling; Capacitor-less; DRAM; Floating body effect; MSD; SOI; Semi-analytical model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Mixed Design of Integrated Circuits and Systems, 2007. MIXDES '07. 14th International Conference on
  • Conference_Location
    Ciechocinek
  • Print_ISBN
    83-922632-9-4
  • Electronic_ISBN
    83-922632-9-4
  • Type

    conf

  • DOI
    10.1109/MIXDES.2007.4286125
  • Filename
    4286125
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3210336