Title :
Experiments and Modeling of Dynamic Floating Body Effects in 1T-Dram Fully Depleted SOI Devices
Author :
Bawedin, M. ; Cristoloveanu, S. ; Dessard, V. ; Flandre, D.
Author_Institution :
Catholic Univ. of Louvain-la-Neuve, Louvain-la-Neuve
Abstract :
We describe the transient floating-body mechanism which occurs in fully depleted SOI transistors and leads to a memory effect. A physics-based model for the potential variation with time is proposed and validated by numerical simulations. This model reproduces and clarifies the operation of the novel capacitor-less MSDRAM, the properties of which are discussed.
Keywords :
DRAM chips; MOSFET; integrated circuit modelling; silicon-on-insulator; 1T-DRAM; SOI MOSFET; Si-SiO2; capacitor-less MSDRAM; dynamic floating body effects; fully depleted SOI devices; memory effect; physics-based model; Analog circuits; Bipolar transistors; Hysteresis; Immune system; Latches; MOSFETs; Numerical simulation; Random access memory; Threshold voltage; Tunneling; Capacitor-less; DRAM; Floating body effect; MSD; SOI; Semi-analytical model;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems, 2007. MIXDES '07. 14th International Conference on
Conference_Location :
Ciechocinek
Print_ISBN :
83-922632-9-4
Electronic_ISBN :
83-922632-9-4
DOI :
10.1109/MIXDES.2007.4286125
