DocumentCode :
3210405
Title :
The relationship between field emission characteristics and defects measured by RAMAN scattering in carbon nanotube cathode treated by plasma and laser irradiation
Author :
Kim, W.S. ; Kinishita, A. ; Murakami, K. ; Abo, S. ; Wakaya, F. ; Takai, M.
Author_Institution :
Osaka Univ., Osaka
fYear :
2007
fDate :
8-12 July 2007
Firstpage :
123
Lastpage :
124
Abstract :
In this study, the relationship between FE characteristics and defects measured by RAMAN scattering in the MWNT cathodes treated by plasma and laser was investigated. The laser power used in RAMAN scattering was about 0.1 mW with a spot area of 8.8 mum2, corresponding to a power density of 1 kW/cm2, which did not induce any damage on the MWNT film. This result indicates that the defects such as dangling bonds in CNTs, acting as emission sites, play an important role on the emission characteristics by the surface treatment.
Keywords :
Raman spectra; carbon nanotubes; cathodes; electron field emission; laser materials processing; plasma materials processing; surface treatment; vacuum microelectronics; C; CNT; RAMAN scattering; carbon nanotube cathode; dangling bonds; defects measurement; emission sites; field emission characteristics; laser irradiation; laser power; plasma treatment; surface treatment; Carbon nanotubes; Cathodes; Current density; Electrodes; Iron; Plasma density; Plasma displays; Plasma measurements; Plasma properties; Raman scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4244-1133-7
Electronic_ISBN :
978-1-4244-1134-4
Type :
conf
DOI :
10.1109/IVNC.2007.4480960
Filename :
4480960
Link To Document :
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