DocumentCode
3210424
Title
The detailed analysis of field emission under stabilized operation using field effect transistor
Author
Neo, Yoichiro ; Matsumoto, Takahiro ; Shimawaki, Hidetaka ; Mimura, Hidenori ; Yokoo, Kuniyoshi
Author_Institution
Shizuoka Univ., Hamamatsu
fYear
2007
fDate
8-12 July 2007
Firstpage
125
Lastpage
126
Abstract
In this report, the effect of field enhancement factor modulation and tip potential controlled by FET were described. The field enhancement factor: beta is easily controlled by potential distribution and the decrease of beta has the effect on reduction of drain voltage and makes the TFT area small. The new concept of stabilization and structure was demonstrated and suggested.
Keywords
field effect transistors; field emission; thin film transistors; FET; field effect transistor; field emission; field enhancement factor modulation; 1f noise; Anodes; Cathodes; FETs; Fluctuations; Information analysis; Phosphors; Research and development; Thin film transistors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location
Chicago, IL
Print_ISBN
978-1-4244-1133-7
Electronic_ISBN
978-1-4244-1134-4
Type
conf
DOI
10.1109/IVNC.2007.4480961
Filename
4480961
Link To Document