DocumentCode :
3210424
Title :
The detailed analysis of field emission under stabilized operation using field effect transistor
Author :
Neo, Yoichiro ; Matsumoto, Takahiro ; Shimawaki, Hidetaka ; Mimura, Hidenori ; Yokoo, Kuniyoshi
Author_Institution :
Shizuoka Univ., Hamamatsu
fYear :
2007
fDate :
8-12 July 2007
Firstpage :
125
Lastpage :
126
Abstract :
In this report, the effect of field enhancement factor modulation and tip potential controlled by FET were described. The field enhancement factor: beta is easily controlled by potential distribution and the decrease of beta has the effect on reduction of drain voltage and makes the TFT area small. The new concept of stabilization and structure was demonstrated and suggested.
Keywords :
field effect transistors; field emission; thin film transistors; FET; field effect transistor; field emission; field enhancement factor modulation; 1f noise; Anodes; Cathodes; FETs; Fluctuations; Information analysis; Phosphors; Research and development; Thin film transistors; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4244-1133-7
Electronic_ISBN :
978-1-4244-1134-4
Type :
conf
DOI :
10.1109/IVNC.2007.4480961
Filename :
4480961
Link To Document :
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