• DocumentCode
    3210434
  • Title

    Electronic features of rippled graphene

  • Author

    Nasiri, Saeed Haji ; Moravvej-Farshi, Mohammad Kazem ; Faez, Rahim ; Bajelan, Aghil

  • Author_Institution
    Dept. of Electr. Eng., Islamic Azad Univ., Qazvin, Iran
  • fYear
    2012
  • fDate
    15-17 May 2012
  • Firstpage
    170
  • Lastpage
    172
  • Abstract
    Using tight binding theory the effect of topological ripples on the electronic band structure, density of states (DOS), and Fermi velocity of graphene are studied. The results show that by an increase in the ripple height the graphene Fermi velocity decreases and its DOS increases.- Moreover, we show that an increase in the ripple period causes the graphene band gap and DOS to decrease and its Fermi velocity to increase.
  • Keywords
    band structure; binding energy; graphene; C; DOS; binding theory; density of states; electronic band structure; graphene Fermi velocity; graphene band gap; rippled graphene; topological ripple effect; Density of states; Electronic band structure; Fermi velocity; Graphene; Topological ripples;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering (ICEE), 2012 20th Iranian Conference on
  • Conference_Location
    Tehran
  • Print_ISBN
    978-1-4673-1149-6
  • Type

    conf

  • DOI
    10.1109/IranianCEE.2012.6292346
  • Filename
    6292346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3210434