• DocumentCode
    3210470
  • Title

    Simulation of memristor crossbar structure on GPU platform

  • Author

    Bavandpour, Mohammad ; Shouraki, Saeed Bagheri ; Soleimani, Hamid ; Ahmadi, Arash ; Makhlooghpour, Ali Asghar

  • Author_Institution
    Artificial Creatures Lab., Sharif Univ. of Technol., Tehran, Iran
  • fYear
    2012
  • fDate
    15-17 May 2012
  • Firstpage
    178
  • Lastpage
    183
  • Abstract
    Memristive devices have gained significant research attention lately because of their unique properties and wide application spectrum. In particular, memristor-based resistive random access memory (RRAM) offers the high density, low power, and low volatility required for next-generation nonvolatile memory. Nowadays, despite significant advances in hardware technology, in the case of massively parallel systems still new computational architectures are required. Simulation of large quantity of memristors in the crossbar structure is a known challenge encountering these barriers. Using graphic processing units (GPU) as a low-cost and high-performance computing platform is an efficient preferred approach to this problem. In this paper, we demonstrate an RRAM simulator that runs on a single GPU. The GPU-RRAM model (running on an NVIDIA GT325M with 1GB of memory) is up to 50 times faster than a CPU version. Besides a limitation on simulation of the memristor in the crossbar structure has been seen when more than 10 thousand of them are simulated but GPU can simulate more than one hundred million ones.
  • Keywords
    graphics processing units; memristors; random-access storage; GPU platform; GPU-RRAM model; NVIDIA GT325M; RRAM simulator; computational architecture; graphic processing units; hardware technology; memristive devices; memristor crossbar structure simulation; memristor-based resistive random access memory; next-generation nonvolatile memory; CMOS integrated circuits; Capacitors; Inductors; Memristors; Graghic Processing Unit (GPU); Memristor; Resistive Random Access Memory (RRAM);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering (ICEE), 2012 20th Iranian Conference on
  • Conference_Location
    Tehran
  • Print_ISBN
    978-1-4673-1149-6
  • Type

    conf

  • DOI
    10.1109/IranianCEE.2012.6292348
  • Filename
    6292348