Title :
Field emission from vertically aligned silicon nanotubes
Author :
Yao, R.H. ; She, J.C. ; Deng, S.Z. ; Chen, Jun ; Xu, N.S.
Author_Institution :
Sun Yat-sen (Zhongshan) Univ., Guangzhou
Abstract :
In the present work, diamond nanoparticles were used as nanomasks for SiNTs fabrication. The diamond nanoparticles with a diameter of about 100 nm were uniformly dispersed on the surface of a Si wafer as masks. The SiNTs were synthesized through a dry etching processing in an inductively coupled plasma (ICP) system. It is concluded that the field emission characteristics of the SiNTs has been performed, the turn-on the threshold fields for field electron emission are -7.9 MV/m and -13.6 MV/m, respectively.
Keywords :
diamond; electron field emission; elemental semiconductors; masks; nanolithography; nanoparticles; plasma materials processing; semiconductor nanotubes; silicon; sputter etching; C; Si; diamond nanoparticles; dry etching processing; field electron emission; inductively coupled plasma system; nanomasks; silicon wafer; size 100 nm; vertically aligned silicon nanotubes; Circuit synthesis; Electron emission; Fabrication; Nanoparticles; Nanotubes; Organic materials; Scanning electron microscopy; Silicon; Sun; Surface morphology;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4244-1133-7
Electronic_ISBN :
978-1-4244-1134-4
DOI :
10.1109/IVNC.2007.4480965
