DocumentCode :
3210614
Title :
Two and three-electrode structure for quantum-dot semiconductor optical amplifiers
Author :
Mohadesrad, Ehsan ; Abedi, Kambiz
Author_Institution :
Dept. of Electr. & Comput. Eng., Shahid Beheshti Univ., Tehran, Iran
fYear :
2012
fDate :
15-17 May 2012
Firstpage :
217
Lastpage :
222
Abstract :
To compensate for the decreasing carrier density in the far side of quantum-dot semiconductor optical amplifiers (QD-SOAs), which directly compromises the optical gain, multi-electrode approach for these devices is introduced. In our study two and three-electrode QD-SOA are studied and tried to establish a base for comparison between these multi-electrode techniques and constant form of injected current. The optical gain of QD-SOA is improved by nearly 10% through discretizing the optimum non-uniform current and then applying it to multi-electrode structure. For doing so, the rate equation model is employed and solved through finite difference method and MATLAB ODE.
Keywords :
electrodes; finite difference methods; quantum dot lasers; semiconductor optical amplifiers; MATLAB ODE; carrier density compensation; finite difference method; multielectrode approach; optical gain; quantum-dot semiconductor optical amplifiers; rate equation model; three-electrode QD-SOA; three-electrode structure; Cavity resonators; Facsimile; Gallium arsenide; Indium gallium arsenide; Optical amplifiers; Multi-electrode; Quantum-dot semiconductor optical amplifier (QD-SOA); Rate equations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering (ICEE), 2012 20th Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4673-1149-6
Type :
conf
DOI :
10.1109/IranianCEE.2012.6292356
Filename :
6292356
Link To Document :
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