• DocumentCode
    3210617
  • Title

    Static Power Consumption in Nano-CMOS Circuits: Physics and Modelling

  • Author

    Kuzmicz, W. ; Piwowarska, E. ; Pfitzner, A. ; Kasprowicz, D.

  • Author_Institution
    Warsaaw Univ. of Technol., Warsaw
  • fYear
    2007
  • fDate
    21-23 June 2007
  • Firstpage
    163
  • Lastpage
    168
  • Abstract
    Static power consumption due to excessive leakage currents is a major problem in CMOS digital ICs with gate lengths of 90 nm and below. In this paper the physics and modelling of these currents is discussed, with special emphasis on variability and its effect on the statistical spread of the static power consumption and total power consumption.
  • Keywords
    CMOS digital integrated circuits; leakage currents; nanoelectronics; CMOS digital IC; leakage currents; nano-CMOS circuits; static power consumption; CMOS digital integrated circuits; CMOS logic circuits; CMOS technology; Energy consumption; Leakage current; Physics; Semiconductor device modeling; Subthreshold current; Threshold voltage; Tunneling; CMOS; Leakage; Static power; Variability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Mixed Design of Integrated Circuits and Systems, 2007. MIXDES '07. 14th International Conference on
  • Conference_Location
    Ciechocinek
  • Print_ISBN
    83-922632-9-4
  • Electronic_ISBN
    83-922632-9-4
  • Type

    conf

  • DOI
    10.1109/MIXDES.2007.4286142
  • Filename
    4286142
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3210617