DocumentCode :
3210778
Title :
Spatial fault simulation and the saturation effect
Author :
Stapper, C.H.
Author_Institution :
IBM Technology Products, Essex Junction, VT, USA
fYear :
1992
fDate :
4-6 Nov 1992
Firstpage :
187
Lastpage :
196
Abstract :
Stochastic fault simulation processes have been used successfully to generate fault distributions for evaluating fault tolerant VLSI designs. In one of these processes, faults in subareas of integrated circuits are simulated as a function of time. This leads to an exponential increase of the average number of faults in the area segments of the integrated circuits. It was discovered analytically that by forcing a correlation between the number of faults in adjacent area segments, the increase in the number of faults with time exceeds exponential growth and exhibits a singularity. At the singularity point the fault population becomes infinite. The time associated with this singularity has been denoted as `saturation time´
Keywords :
VLSI; digital simulation; fault location; stochastic processes; area segments; exponential growth; fault distributions; fault population; fault tolerant VLSI designs; saturation effect; singularity point; spatial fault simulation; stochastic simulation; subareas; Circuit faults; Circuit simulation; Fault tolerant systems; Frequency; Integrated circuit manufacture; Integrated circuit modeling; Integrated circuit technology; Integrated circuit yield; Stochastic processes; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Defect and Fault Tolerance in VLSI Systems, 1992. Proceedings., 1992 IEEE International Workshop on
Conference_Location :
Dallas, TX
ISSN :
1550-5774
Print_ISBN :
0-8186-2837-5
Type :
conf
DOI :
10.1109/DFTVS.1992.224356
Filename :
224356
Link To Document :
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