• DocumentCode
    3210778
  • Title

    Spatial fault simulation and the saturation effect

  • Author

    Stapper, C.H.

  • Author_Institution
    IBM Technology Products, Essex Junction, VT, USA
  • fYear
    1992
  • fDate
    4-6 Nov 1992
  • Firstpage
    187
  • Lastpage
    196
  • Abstract
    Stochastic fault simulation processes have been used successfully to generate fault distributions for evaluating fault tolerant VLSI designs. In one of these processes, faults in subareas of integrated circuits are simulated as a function of time. This leads to an exponential increase of the average number of faults in the area segments of the integrated circuits. It was discovered analytically that by forcing a correlation between the number of faults in adjacent area segments, the increase in the number of faults with time exceeds exponential growth and exhibits a singularity. At the singularity point the fault population becomes infinite. The time associated with this singularity has been denoted as `saturation time´
  • Keywords
    VLSI; digital simulation; fault location; stochastic processes; area segments; exponential growth; fault distributions; fault population; fault tolerant VLSI designs; saturation effect; singularity point; spatial fault simulation; stochastic simulation; subareas; Circuit faults; Circuit simulation; Fault tolerant systems; Frequency; Integrated circuit manufacture; Integrated circuit modeling; Integrated circuit technology; Integrated circuit yield; Stochastic processes; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Defect and Fault Tolerance in VLSI Systems, 1992. Proceedings., 1992 IEEE International Workshop on
  • Conference_Location
    Dallas, TX
  • ISSN
    1550-5774
  • Print_ISBN
    0-8186-2837-5
  • Type

    conf

  • DOI
    10.1109/DFTVS.1992.224356
  • Filename
    224356