Title :
Spatial fault simulation and the saturation effect
Author_Institution :
IBM Technology Products, Essex Junction, VT, USA
Abstract :
Stochastic fault simulation processes have been used successfully to generate fault distributions for evaluating fault tolerant VLSI designs. In one of these processes, faults in subareas of integrated circuits are simulated as a function of time. This leads to an exponential increase of the average number of faults in the area segments of the integrated circuits. It was discovered analytically that by forcing a correlation between the number of faults in adjacent area segments, the increase in the number of faults with time exceeds exponential growth and exhibits a singularity. At the singularity point the fault population becomes infinite. The time associated with this singularity has been denoted as `saturation time´
Keywords :
VLSI; digital simulation; fault location; stochastic processes; area segments; exponential growth; fault distributions; fault population; fault tolerant VLSI designs; saturation effect; singularity point; spatial fault simulation; stochastic simulation; subareas; Circuit faults; Circuit simulation; Fault tolerant systems; Frequency; Integrated circuit manufacture; Integrated circuit modeling; Integrated circuit technology; Integrated circuit yield; Stochastic processes; Very large scale integration;
Conference_Titel :
Defect and Fault Tolerance in VLSI Systems, 1992. Proceedings., 1992 IEEE International Workshop on
Conference_Location :
Dallas, TX
Print_ISBN :
0-8186-2837-5
DOI :
10.1109/DFTVS.1992.224356