• DocumentCode
    3210813
  • Title

    Impact of gate-oxide breakdown of varying hardness on narrow and wide nFET´s

  • Author

    Kaczer, B. ; De Keersgieter, A. ; Mahmood, S. ; Degraeve, R. ; Groeseneken, G.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    79
  • Lastpage
    83
  • Abstract
    The soft gate-oxide breakdown event is observed to have negligible impact on the intrinsic parameters of even a narrow nFET. However, during subsequent wear-out of the breakdown path a significant impact of gate-to-channel breakdowns on nFET characteristics is found. It is also shown that (i) the effect of voltage stress on gate oxide and (ii) apparent electrical effects have to be corrected for to properly understand the intrinsic nature of the breakdown.
  • Keywords
    MOSFET; dielectric thin films; electric breakdown; hardness; leakage currents; semiconductor device breakdown; semiconductor device reliability; gate-oxide breakdown; hardness; narrow nFET; soft gate-oxide breakdown event; voltage stress; CMOS technology; Circuit synthesis; Electric breakdown; Electrical resistance measurement; FETs; Low voltage; MOSFET circuits; Random access memory; Stress; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315305
  • Filename
    1315305
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3210813