Title :
A Ka-band planar tripler based on a stacked symmetric InP heterostructure-barrier varactor
Author :
Krishnamurthi, Karthik ; Boch, E. ; Harrison, R.G.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Abstract :
The symmetric heterostructure barrier varactor (HBV) lends itself to frequency tripling with no need for bias or for a second harmonic idler circuit. This paper presents the performance of the first planar microstrip Ka-band frequency tripler based on a stacked HBV structure. A minimum conversion loss of 11.2 dB with a maximum power output of 10.78 dBm at 40.35 GHz is obtained.<>
Keywords :
III-V semiconductors; frequency multipliers; indium compounds; microstrip circuits; microwave integrated circuits; millimetre wave diodes; millimetre wave frequency convertors; varactors; 11.2 dB; 40.35 GHz; EHF; InP; Ka-band; MIC; MM-wave circuit; frequency tripling; heterostructure barrier varactor; planar microstrip circuit; planar tripler; stacked symmetric structure; Band pass filters; Circuits; Frequency; Impedance; Indium phosphide; Leakage current; Microstrip; Power generation; Varactors; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406027
