DocumentCode :
3210874
Title :
Comparison of Two Pole-Zero Cancellation Circuits for Fast Charge Sensitive Amplifier in CMOS Technology
Author :
Grybos, P. ; Maj, P. ; Szczygie, R.
Author_Institution :
AGH Univ. of Sci. & Technol., Krakow
fYear :
2007
fDate :
21-23 June 2007
Firstpage :
243
Lastpage :
246
Abstract :
The problem of charge sensitive amplifier and pole-zero cancellation circuit designed in CMOS technology for high rates of input pulses is considered. The continuously sensitive charge amplifier uses a MOS transistor biased in triode region to discharge the integration capacitance. Low noise requirements of the front-end electronics place the feedback CSA resistance in hundreds of the megaohm range. However the high counting rate of input pulses generates a DC voltage shift at the CSA output which could degrade the circuit performance. We analyze two circuit architectures for biasing transistors in feedback of CSA and PZC circuit taking into account the pile-up effects in the signal processing chain.
Keywords :
CMOS integrated circuits; MOSFET; poles and zeros; CMOS technology; DC voltage shift; HSPICE analysis; MOS transistor; biasing transistors; circuit architecture; fast charge sensitive amplifier; feedback amplifier resistance; front-end electronics; integration capacitance; pole-zero cancellation circuits; readout electronics; signal processing; CMOS technology; Capacitance; Circuit noise; DC generators; Feedback circuits; MOSFETs; Noise cancellation; Pulse amplifiers; Pulse circuits; Pulse generation; Charge sensitive amplifier; Pole-zero cancellation circuit;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mixed Design of Integrated Circuits and Systems, 2007. MIXDES '07. 14th International Conference on
Conference_Location :
Ciechocinek
Print_ISBN :
83-922632-9-4
Electronic_ISBN :
83-922632-9-4
Type :
conf
DOI :
10.1109/MIXDES.2007.4286158
Filename :
4286158
Link To Document :
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