DocumentCode :
3210946
Title :
The influence of deep trench and substrate resistance on the latchup robustness in a BiCMOS silicon germanium technology
Author :
Voldman, Steven H. ; Watson, Anne
Author_Institution :
IBM Microeletronics, Essex Junction, VT, USA
fYear :
2004
fDate :
25-29 April 2004
Firstpage :
135
Lastpage :
142
Abstract :
This paper will demonstrate the effect of deep trench (DT) on the latchup robustness of an 0.13 μm 200 GHz BiCMOS SiGeC HBT technology. Guard ring efficiency is evaluated using deep trench guard ring structures and compared to standard p+ and n-well guard ring structures. The latchup robustness is evaluated using pnpn structures with a deep trench perimeter on the edge of the well structure. Latchup robustness of pnpn structures is evaluated as a function of trench depth where the deep trench serves as a guard ring for the n-well region. Key latchup metrics, such as turn-on, trigger and sustaining voltage and current conditions, for a range of p+/n+ spacings as a function of trench depth, and external well and external substrate resistance is quantified. Trigger contours in a linear-logarithm space of trench depth and substrate resistance form a design space for optimization of latchup. Experimental results show that utilizing deep trench structure, and substrate contact spacing allows for latchup robustness in a low doped p-substrate wafer technology.
Keywords :
BiCMOS digital integrated circuits; BiCMOS integrated circuits; Ge-Si alloys; electrostatic discharge; flip-flops; heterojunction bipolar transistors; 0.13 micron; 200 GHz; BiCMOS SiGeC HBT technology; SiGeC; deep trench; deep trench guard ring structures; latchup robustness; linear-logarithm space; substrate resistance; trigger contours; BiCMOS integrated circuits; Bipolar transistors; Current measurement; Electric resistance; Electrons; Germanium silicon alloys; Physics; Robustness; Silicon germanium; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
Type :
conf
DOI :
10.1109/RELPHY.2004.1315314
Filename :
1315314
Link To Document :
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