Title :
Characterization of the time-dependent reliability fallout as a function of yield for a 130nm SRAM device and application to optimize production burn-in
Author :
Forbes, Keith R. ; Schani, Phil
Author_Institution :
Motorola Semicond. Product Sector, Austin, TX, USA
Abstract :
A model is presented to optimize burn-in time based on product yield. A relationship between yield and reliability is developed and demonstrated with tests on a 130nm SRAM test device. Voltage and thermal acceleration are added to this model to appropriately scale predictions to product use conditions. High-voltage test screening is found to have a similar effect as burn-in in reducing infant mortality and thus can also be incorporated into this model. A conditional reliability model is needed to model the effects of both burn-in and high-voltage screening; these effects cannot be modeled as if they simply reduce the defectivity of the population. This approach can be used to predict the amount of high-voltage test screening and burn-in needed in order to qualify a production device built with the same technology.
Keywords :
SRAM chips; integrated circuit manufacture; integrated circuit reliability; integrated circuit yield; 130 nm; 130nm SRAM device; high-voltage test screening; optimize production burn-in; thermal acceleration; time-dependent reliability fallout; voltage; yield; Acceleration; CMOS technology; Costs; Predictive models; Production; Random access memory; Semiconductor device manufacture; Semiconductor device modeling; Testing; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315318
