DocumentCode :
3211108
Title :
Magnetoresistive random access memory (MRAM) and reliability
Author :
Hughes, Brian
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
fYear :
2004
fDate :
25-29 April 2004
Firstpage :
194
Lastpage :
199
Abstract :
This paper provides an overview of the design and operation of, and materials used in, magnetoresistive random access memory (MRAM) with emphasis from a reliability engineering perspective. The speaker will provide background information on MRAM architectures and discuss novel reliability problems inherent to MRAM. Reliability issues and concerns will be discussed and illustrated with examples wherever possible. The intention of the paper is to give attendees a basic and broad introduction to the potential reliability issues and challenges raised by this new memory form.
Keywords :
magnetic storage; magnetoresistive devices; random-access storage; reliability; design; magnetoresistive random access memory; operation; reliability; reliability engineering perspective; reliability issues; reliability problems; Antiferromagnetic materials; FETs; Magnetic materials; Magnetic tunneling; Magnetoresistance; Polarization; Random access memory; Reliability engineering; Thermal resistance; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
Type :
conf
DOI :
10.1109/RELPHY.2004.1315323
Filename :
1315323
Link To Document :
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