A field emission display based on double-gated driving scheme for quasi-one dimensional nanoemitters

Field emission display (FED) has been drawing continuous attention from industry and academic community. Attempts have been made to search for proper FED structure candidate for various nanoemitters which have been explored recently (Choi et al., 1999). To extend the possibility of applications of many newly found quasi-one dimensional nanoemitters material in FED, as well as to achieve high luminance, a device structure with double-gate driving scheme was proposed and tested. With this double-gate driving principle, patternless nanoemitters material, deposited on virtually any substrates, can be incorporated into FED application.