Title :
Preparation and characteristics of insulator layers for field emission display device
Author :
Huang, Jieke ; Chen, Jun ; Deng, S.Z. ; She, J.C. ; Xu, N.S.
Author_Institution :
Sun Yat-sen (Zhongshan) Univ., Guangzhou
Abstract :
In this study, insulator layers prepared by e-beam evaporation were investigated. Attempts were made to prepare SiO2 and Al2O3 multi-layer stack structure to improve the dielectric property of the gate insulator layer prepared in large area. Insulator layers consisting of various composition and numbers of layers were prepared and their dielectric properties were compared.
Keywords :
alumina; dielectric properties; electron beam applications; evaporation; field emission displays; multilayers; silicon compounds; Al2O3; Al2O3 multi-layer stack structure; SiO2; SiO2 multi-layer stack structure; dielectric property; electron-beam evaporation; field emission display device; gate insulator layer; insulator layers; Aluminum oxide; Argon; Atomic force microscopy; Dielectric substrates; Dielectrics and electrical insulation; Electric breakdown; Flat panel displays; Indium tin oxide; Plasma temperature; Scanning electron microscopy;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4244-1133-7
Electronic_ISBN :
978-1-4244-1134-4
DOI :
10.1109/IVNC.2007.4480997
