Title :
Reliability of flash memory erasing operation under high tunneling electric fields
Author :
Chimenton, Andrea ; Olivo, Piero
Author_Institution :
Dipt. di Ingegneria, Ferrara Univ., Italy
Abstract :
Experimental results show that the use of high electric fields during erasing of flash memories leads to a degradation of the reliability due to the increase of the erratic erase. The generation of new erratic bits during cycling has been related to the Anode Hole Injection phenomena.
Keywords :
flash memories; semiconductor device reliability; tunnelling; anode hole injection phenomena; erratic bits; erratic erase; flash memory erasing operation reliability; high tunneling electric fields; Anodes; Degradation; Failure analysis; Flash memory; Iron; Leakage current; Physics; Probability distribution; Threshold voltage; Tunneling;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315326
