60-GHz monolithic oscillator using InGaP/InGaAs/GaAs HEMT technology

Author

Kawasaki, Yoji ; Shirakawa, Kazuhiro ; Ohashi, Yoshimasa ; Saito, Takashi

Author_Institution

Acv. Millimeter Wave Technol. Co. Ltd., Nakahara, Japan

fYear

1995

fDate

16-20 May 1995

Firstpage

541

Abstract

Using 0.11-/spl mu/m InGaP/InGaAs/GaAs pseudomorphic HEMT technology, we have developed a 60 GHz buffered free-running monolithic oscillator which has an output power of 9.1 dBm at 59.7 GHz and a phase noise of -60 dBc/Hz at 100 kHz from the carrier frequency. We operated the oscillator´s HEMT in a reverse channel configuration and introduced an empirical nonlinear HEMT model for the configuration.<>

Keywords

HEMT integrated circuits; III-V semiconductors; S-parameters; equivalent circuits; field effect MIMIC; gallium arsenide; gallium compounds; indium compounds; millimetre wave oscillators; semiconductor device models; 0.11 micron; 59.7 to 60 GHz; EHF; HEMT technology; InGaP-InGaAs-GaAs; MIMIC; MM-wave IC; buffered free-running oscillator; monolithic oscillator; nonlinear HEMT model; pseudomorphic HEMT; reverse channel configuration; Electrical resistance measurement; Feedback circuits; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Millimeter wave radar; Millimeter wave technology; Oscillators; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406029

Filename

406029