Title :
Analysis of Data Obtained Using the Thermal Step Method on a MOS Structure - An Electrostatic Approach
Author :
Boyer, L. ; Fruchier, O. ; Notingher, P., Jr. ; Agnel, S. ; Toureille, A. ; Rousset, B. ; Sanchez, J.L., Jr.
Author_Institution :
Inst. d´´Electron. du Sud IES/GEM, Univ. of Montpellier 2, Montpellier
Abstract :
The thermal step method is a non destructive electric charge measurement technique, based on the acquisition of a capacitive current appearing when an insulating structure is crossed by a low amplitude thermal wave. Elements concerning the electrostatic behavior of a metal-oxide-semiconductor structure while crossed by a thermal wave are addressed in the present paper in view of the analysis of data obtained using the thermal step method in MOS capacitors. Applications to experimental data obtained from MOS samples with 120 nm-thick oxides are presented.
Keywords :
MOS capacitors; charge measurement; electric charge; MOS capacitors; MOS structure; nondestructive electric charge measurement technique; space charge; thermal step method; Aluminum; Charge measurement; Data analysis; Dielectrics and electrical insulation; Electrostatic analysis; MOS capacitors; Silicon; Space charge; Substrates; Voltage;
Conference_Titel :
Industry Applications Society Annual Meeting, 2008. IAS '08. IEEE
Conference_Location :
Edmonton, Alta.
Print_ISBN :
978-1-4244-2278-4
Electronic_ISBN :
0197-2618
DOI :
10.1109/08IAS.2008.111
