Analysis of Data Obtained Using the Thermal Step Method on a MOS Structure - An Electrostatic Approach

Author

Boyer, L. ; Fruchier, O. ; Notingher, P., Jr. ; Agnel, S. ; Toureille, A. ; Rousset, B. ; Sanchez, J.L., Jr.

Author_Institution

Inst. d´´Electron. du Sud IES/GEM, Univ. of Montpellier 2, Montpellier

fYear

2008

fDate

5-9 Oct. 2008

Firstpage

1

Lastpage

6

Abstract

The thermal step method is a non destructive electric charge measurement technique, based on the acquisition of a capacitive current appearing when an insulating structure is crossed by a low amplitude thermal wave. Elements concerning the electrostatic behavior of a metal-oxide-semiconductor structure while crossed by a thermal wave are addressed in the present paper in view of the analysis of data obtained using the thermal step method in MOS capacitors. Applications to experimental data obtained from MOS samples with 120 nm-thick oxides are presented.

Keywords

MOS capacitors; charge measurement; electric charge; MOS capacitors; MOS structure; nondestructive electric charge measurement technique; space charge; thermal step method; Aluminum; Charge measurement; Data analysis; Dielectrics and electrical insulation; Electrostatic analysis; MOS capacitors; Silicon; Space charge; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 2008. IAS '08. IEEE

Conference_Location

Edmonton, Alta.

ISSN

0197-2618

Print_ISBN

978-1-4244-2278-4

Electronic_ISBN

0197-2618

Type

conf

DOI

10.1109/08IAS.2008.111

Filename

4658899