Title :
Crystallization mechanism in films along GeTe-SbTe pseudo-binary line
Author :
Morales-Sanchez, E. ; Prokhorov, E. ; Salas, J. A Muñoz ; González-Hernández, J. ; Trapaga, G.
Author_Institution :
CICATA-IPN, Queretaro, Mexico
Abstract :
The aim of this work is to compare the isothermal crystallization kinetic in the films along GeTe-Sb2Te3 line with composition Ge2Sb2Te5, Ge1Sb2Te4, Ge1Sb4Te7 and Ge4Sb1Te5 using mainly Johnson-Mehl-Avrami-Kolmogorov (JMAK) model. Results obtained have shown different crystallization mechanism in the investigated films. In Ge2Sb2Te5 and Ge1Sb2Te4 films the analysis of the kinetic results (Avrani coefficient) showed that at the beginning of crystallization a metastable phase appeared with the Ge1Sb4Te7 composition, this is followed by the nucleation and growth of the stable fcc phase up to full crystallization. In contrast Ge4Sb1Te5 and Ge1Sb4Te7 films show diffusion control growing from small dimension grains with decreasing nucleation rate.
Keywords :
antimony compounds; chalcogenide glasses; crystallisation; diffusion; germanium compounds; nucleation; phase change materials; semiconductor thin films; Ge2Sb2Te5; Ge4SbTe5; GeSb2Te4; GeSb4Te7; Johnson-Mehl-Avrami-Kolmogorov model; diffusion; films; isothermal crystallization kinetics; metastable phase; nucleation rate; pseudobinary line; small dimension grains; stable fee phase growth; Amorphous materials; Annealing; Crystalline materials; Crystallization; Electrical resistance measurement; Isothermal processes; Kinetic theory; Optical films; Phase change materials; Reflectivity; Crystallization; growth phase; nucleation;
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control,CCE,2009 6th International Conference on
Conference_Location :
Toluca
Print_ISBN :
978-1-4244-4688-9
Electronic_ISBN :
978-1-4244-4689-6
DOI :
10.1109/ICEEE.2009.5393373
