• DocumentCode
    3211327
  • Title

    A comprehensive framework for predictive modeling of negative bias temperature instability

  • Author

    Chakravarthi, S. ; Krishnan, A.T. ; Reddy, V. ; Machala, C.F. ; Krishnan, Sridhar

  • Author_Institution
    Silicon Technol. Dev., Texas Instruments Inc., Dallas, TX, USA
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    273
  • Lastpage
    282
  • Abstract
    A quantitative model is developed for the first time, that comprehends all the unique characteristics of NBTI degradation. Several models are critically examined to develop a reaction/diffusion based modeling framework for predicting interface state generation during NBTI stress. NBTI degradation is found to be dominated by diffusion of neutral atomic and molecular hydrogen related defects. Additionally, the presence of hydrogen gettering sites such as unsaturated grain bound- aries significantly enhance NBTI degradation, whereas hydrogen sources reduce NBTI degradation. The model also suggests the possible mechanisms for saturation. The model is calibrated over a range of stress temperatures and voltages. The model captures recovery, experimental delay and frequency effects successfully.
  • Keywords
    CMOS integrated circuits; electric breakdown; getters; grain boundaries; integrated circuit modelling; integrated circuit reliability; semiconductor device models; semiconductor device reliability; H gettering sites; comprehensive framework; diffusion; interface state generation; negative bias temperature instability; predictive modeling; reaction/diffusion based modeling framework; stress temperatures; unsaturated grain boundaries; voltages; Degradation; Gettering; Hydrogen; Interface states; Negative bias temperature instability; Niobium compounds; Predictive models; Stress; Temperature distribution; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315337
  • Filename
    1315337