Comparison between neutron-induced system-SER and accelerated-SER in SRAMS

Author

Kobayashi, Hajime ; Usuki, Hideki ; Shiraishi, Ken ; Tsuchiya, Hiroo ; Kawamoto, Nobutaka ; Merchant, Ghulam ; Kase, Jun

Author_Institution

Sony Corp., Kanagawa, Japan

fYear

2004

fDate

25-29 April 2004

Firstpage

288

Lastpage

293

Abstract

The high energy neutron-induced SSER and ASER in SRAMs were compared, and a large discrepancy of a factor of 2.6 was observed. We investigated the possible causes of this discrepancy, including the accuracy of the neutron flux, the high flux effect, the incident neutron angle dependence, the temperature dependence, and the time variation of the cosmic rays, etc. As a result, we concluded that the discrepancy originates from the value assumed for the neutron flux at sea level. We normalized our ASER results to the SSER of 0.18 μm SRAMs so as not to use the neutron flux at sea level. The SER of a 0.13 μm 16 Mb SRAM is approximately 270 FIT/Mb.

Keywords

SRAM chips; neutron effects; radiation hardening (electronics); 0.13 micron; 0.18 micron; 16 Mbyte; SRAMS; accelerated-SER; cosmic rays; high flux effect; incident neutron angle dependence; neutron flux; neutron-induced system-SER; temperature dependence; time variation; Acceleration; CMOS technology; Cities and towns; Neutrons; Performance evaluation; Random access memory; Sea level; Space technology; Testing; Thermal factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International

Print_ISBN

0-7803-8315-X

Type

conf

DOI

10.1109/RELPHY.2004.1315339

Filename

1315339