Title :
Device Level Electrothermal Analysis of Integrated Resistors
Author :
Vermeersch, B. ; De Mey, G.
Author_Institution :
Ghent Univ., Ghent
Abstract :
This paper presents the electrothermal simulation of integrated thin film resistors. Both the thermal and electrical problem is tackled by a semi-analytical method, without the need of generating an equivalent distributed network. As the electrical conductivity is temperature dependent, self-heating of the resistor will alterate the current distribution, leading to a non-uniform power dissipation. This then provokes a change of the temperature distribution, explaining the electrothermal coupling. Examples are given for various practical resistor designs. After a few iterations stable values for the electrical and thermal resistance and temperature and power distributions are obtained. The results show that even if one would anticipate the self-heating process based on an estimated average temperature, the behaviour will still deviate from the original design. This is caused entirely by the non-uniformity of the distributions inside the component.
Keywords :
current distribution; electrical conductivity; temperature distribution; thin film resistors; current distribution; device level electrothermal analysis; electrical conductivity; electrothermal coupling; electrothermal simulation; equivalent distributed network; integrated thin film resistors; semi-analytical method; Conductivity; Current distribution; Distributed power generation; Electrothermal effects; Power dissipation; Resistors; Temperature dependence; Temperature distribution; Thermal resistance; Transistors; Electrothermal analysis; Resistor; Thermal runaway;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems, 2007. MIXDES '07. 14th International Conference on
Conference_Location :
Ciechocinek
Print_ISBN :
83-922632-9-4
Electronic_ISBN :
83-922632-9-4
DOI :
10.1109/MIXDES.2007.4286187