DocumentCode :
3211380
Title :
Molecular Dynamics of Poly 3-Hexyl Thiophene by Broadband Dielectric Spectroscopy
Author :
Petre, Anca ; Diaham, Sombel ; Reyes-Melo, Edgar ; Saini, Viney ; Li, Zhongrui ; Biris, Alexandru S. ; Samuila, Adrian ; Dascalescu, Lucian
Author_Institution :
Lab. LAPLACE, Paul Sabatier Univ., Toulouse
fYear :
2008
fDate :
5-9 Oct. 2008
Firstpage :
1
Lastpage :
4
Abstract :
Some of the most exciting novel approaches for renewable solar energy conversion are the organic photovoltaic devices that take advantage of the unique properties of polymers such as poly(3-hexylthiphene) (P3HT). Although this type of devices present significant advantages (stability, price) their long-term performance has to be continuously improved. This study describes the dielectric behaviour of pristine poly(3- hexylthiophene) (P3HT) and its nanocomposites versus temperature and frequency by using broadband dielectric spectroscopy. Dielectric spectra reveal the existence of two relaxation phenomena (alpha, beta), below and above the glass transition. The a relaxation is related to the crystallization phenomena and the beta relaxation is due to dipolar polarization processes. These results can be incorporated into a continuous understanding of the electrical behaviours of such polymers, which play extremely important roles in the overall quality of photovoltaic devices that use such polymeric materials.
Keywords :
crystallisation; dielectric relaxation; glass transition; molecular dynamics method; nanocomposites; polymers; beta relaxation; broadband dielectric spectroscopy; crystallization phenomena; dielectric spectra; dipolar polarization processes; glass transition; molecular dynamics; nanocomposites; poly(3-hexyl thiophene); relaxation phenomena; Dielectrics; Electrochemical impedance spectroscopy; Frequency; Nanocomposites; Photovoltaic systems; Polymers; Solar energy; Solar power generation; Stability; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Society Annual Meeting, 2008. IAS '08. IEEE
Conference_Location :
Edmonton, Alta.
ISSN :
0197-2618
Print_ISBN :
978-1-4244-2278-4
Electronic_ISBN :
0197-2618
Type :
conf
DOI :
10.1109/08IAS.2008.116
Filename :
4658904
Link To Document :
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