Parameters Identification of Embedded PTAT Temperature Sensors for CMOS Circuits

Author

Golda, A. ; Kos, A.

Author_Institution

AGH Univ. of Sci. & Technol., Krakow

fYear

2007

fDate

21-23 June 2007

Firstpage

392

Lastpage

395

Abstract

In this paper, we describe the parameters identification results of PTAT (proportional to absolute temperature) temperature sensors that are implemented in the test chip and dedicated to CMOS integrated circuits. Theirs principles of operation are based on the vertical PNP structure. These sensing elements are uniformly distributed on the chip surface. The chip is dedicated to analyses and verifications of various electro-thermal phenomena in microelectronic VLSI circuits and is fabricated in CMOS 0.7 mum technology. The measurements were performed in a thermal chamber for the temperature range of 288-358 K. The achieved sensitivities of the temperature sensors are within following limits 3.44 to 4.82 mV/K.

Keywords

CMOS integrated circuits; integrated circuit design; integrated circuit testing; intelligent sensors; parameter estimation; temperature sensors; CMOS integrated circuits; electro-thermal phenomena; embedded PTAT temperature sensors; microelectronic VLSI circuits; parameters identification; proportional-to-absolute temperature sensors; size 0.7 mum; temperature 288 K to 358 K; thermal chamber; vertical PNP structure; CMOS integrated circuits; CMOS technology; Circuit testing; Integrated circuit technology; Integrated circuit testing; Microelectronics; Parameter estimation; Semiconductor device measurement; Temperature sensors; Very large scale integration; CMOS circuits; Embedded temperature sensors; Measurements; PTAT;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems, 2007. MIXDES '07. 14th International Conference on

Conference_Location

Ciechocinek

Print_ISBN

83-922632-9-4

Electronic_ISBN

83-922632-9-4

Type

conf

DOI

10.1109/MIXDES.2007.4286190

Filename

4286190