Title :
Efficiency of surface conduction electron emission from ZnO nanostructure
Author :
Wei, Lei ; Zhang, Xiaobing ; Zhu, Zuoya ; Yang, Guodong ; Huang, Chengxian
Author_Institution :
Southeast Univ., Nanjing
Abstract :
In this paper, we study the influence of the ZnO nanostructures, gap between cathode and gate, resistance of ZnO layer, and the accelerate electric field on the ration of Ia/Ig. Fig.3 gives the variation of gate current and anode current with different cathode-gate distance. From these curves, the electron emission efficiency can be estimated.
Keywords :
II-VI semiconductors; electric fields; electron emission; wide band gap semiconductors; zinc compounds; ZnO; accelerate electric field; anode current; cathode-gate distance; electron emission; gate current; surface conduction; Acceleration; Anodes; Cathodes; Displays; Electric resistance; Electrodes; Electron emission; Research and development; Voltage; Zinc oxide;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4244-1133-7
Electronic_ISBN :
978-1-4244-1134-4
DOI :
10.1109/IVNC.2007.4481016
