DocumentCode
3211472
Title
Efficiency of surface conduction electron emission from ZnO nanostructure
Author
Wei, Lei ; Zhang, Xiaobing ; Zhu, Zuoya ; Yang, Guodong ; Huang, Chengxian
Author_Institution
Southeast Univ., Nanjing
fYear
2007
fDate
8-12 July 2007
Firstpage
247
Lastpage
248
Abstract
In this paper, we study the influence of the ZnO nanostructures, gap between cathode and gate, resistance of ZnO layer, and the accelerate electric field on the ration of Ia/Ig. Fig.3 gives the variation of gate current and anode current with different cathode-gate distance. From these curves, the electron emission efficiency can be estimated.
Keywords
II-VI semiconductors; electric fields; electron emission; wide band gap semiconductors; zinc compounds; ZnO; accelerate electric field; anode current; cathode-gate distance; electron emission; gate current; surface conduction; Acceleration; Anodes; Cathodes; Displays; Electric resistance; Electrodes; Electron emission; Research and development; Voltage; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location
Chicago, IL
Print_ISBN
978-1-4244-1133-7
Electronic_ISBN
978-1-4244-1134-4
Type
conf
DOI
10.1109/IVNC.2007.4481016
Filename
4481016
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