DocumentCode :
3211503
Title :
Highly reliable dielectric/metal bilayer sidewall diffusion barrier in Cu/porous organic ultra low-k interconnects
Author :
Chen, Zhe ; Prasad, K. ; Li, C.Y. ; Lu, P.W. ; Su, S.S. ; Tang, L.J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear :
2004
fDate :
25-29 April 2004
Firstpage :
320
Lastpage :
325
Abstract :
A robust dielectric/metal bilayer sidewall diffusion barrier, using a-SiC:H as the dielectric layer and Ta as the metal layer, was integrated with Cu/porous organic ultra low-k damascene structure. The reliability and electrical performance of a-SiC:H/Ta bilayer barrier were significantly better than the conventional physical vapor deposition (PVD) multi-stacked Ta(N) metal barrier. The plasma enhanced chemical vapor deposition (PECVD) a-SiC:H layer is able to effectively seal the rough surface of porous low-k material, resulting in improved electrical performance and reliability.
Keywords :
copper; dielectric thin films; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; organic compounds; permittivity; plasma CVD coatings; semiconductor device reliability; surface diffusion; surface roughness; Cu; Cu/porous organic ultra low-k interconnects; a-SiC:H; dielectric layer; electrical performance; highly reliable dielectric/metal bilayer sidewall diffusion barrier; metal layer; plasma enhanced chemical vapor deposition; reliability; rough surface; Atherosclerosis; Chemical vapor deposition; Dielectrics; Plasma chemistry; Plasma materials processing; Robustness; Rough surfaces; Sealing materials; Seals; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
Type :
conf
DOI :
10.1109/RELPHY.2004.1315345
Filename :
1315345
Link To Document :
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