Impact of the barrier/dielectric interface quality on reliability of Cu porous-low-k interconnects

Author

Tokei, Zs ; Sutcliffe, V. ; Demuynck, S. ; Iacopi, Francesca ; Roussel, P. ; Beyer, G.P. ; Hoofman, R.J.O.M. ; Maex, K.

Author_Institution

IMEC, Leuven, Belgium

fYear

2004

fDate

25-29 April 2004

Firstpage

326

Lastpage

332

Abstract

The purpose is to show that TDDB reliability of damascene structures has to be assessed as a system composed of a dielectric, copper diffusion barrier and copper. This becomes mandatory when porous low-k materials are considered, since barrier integrity is a key contributor in TDDB behavior. Solely addressing the dielectric properties is not adequate. When a not fully dense barrier is considered the apparent dielectric properties are degraded due to copper migration into the dielectric.

Keywords

copper; dielectric thin films; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; semiconductor device reliability; Cu porous-low-k interconnects; barrier integrity; barrier/dielectric interface quality; dielectric properties; fully dense barrier; reliability; Chemical vapor deposition; Copper; Degradation; Dielectric materials; Etching; Organic materials; Polymers; Semiconductor materials; Silicon carbide; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International

Print_ISBN

0-7803-8315-X

Type

conf

DOI

10.1109/RELPHY.2004.1315346

Filename

1315346