DocumentCode :
3211530
Title :
Ion Back-Bombardment of GaAs Photocathodes Inside DC High Voltage Electron Guns
Author :
Grames, J. ; Adderley, P. ; Brittian, J. ; Charles, D. ; Clark, J. ; Hansknecht, J. ; Poelker, M. ; Stutzman, M. ; Surles-Law, K.
Author_Institution :
Thomas Jefferson National Accelerator Facility, Newport News, VA 23606, U.S.A. grames@jlab.org
fYear :
2005
fDate :
16-20 May 2005
Firstpage :
2875
Lastpage :
2877
Abstract :
DC high voltage GaAs photoguns are key components at accelerator facilities worldwide. New experiments and new accelerator facilities demand improved performance from these guns, in particular higher current operation and longer photocathode operating lifetime. This conference submission explores bulk GaAs photocathode lifetime as a function of beam current, active photocathode area, laser spot size and the vacuum of the gun and beam line. Lifetime measurements were made at 100 μA, a beam current relevant for accelerators like CEBAF, and at beam currents of 1 mA and 5 mA, a regime that is interesting for high current Free Electron Laser (FEL) and Energy Recovery Linac (ERL) operation.
Keywords :
Cathodes; Electron accelerators; Electron guns; Free electron lasers; Gallium arsenide; Ion accelerators; Laser beams; Lifetime estimation; Particle beams; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Particle Accelerator Conference, 2005. PAC 2005. Proceedings of the
Print_ISBN :
0-7803-8859-3
Type :
conf
DOI :
10.1109/PAC.2005.1591299
Filename :
1591299
Link To Document :
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