• DocumentCode
    3211558
  • Title

    Molecular dynamics simulations of femtosecond laser ablation of silicon

  • Author

    Wang, Li-Mei ; Zeng, Xinwu

  • Author_Institution
    Coll. of Optoelectron. Eng., Nat. Univ. of Defense Technol., Changsha, China
  • Volume
    2
  • fYear
    2011
  • fDate
    29-31 July 2011
  • Abstract
    Molecular dynamics simulations were carried out to investigate the ablation process of silicon under irradiation of 266nm femtosecond laser. Evolutions of macro-variables were studied and final Profile and movement traces of atoms were obtained in Si(100) with laser intensity of 400GW/cm2. Characteristics of ablation processes of Si(100) and Si(111) were compared. The amount of removal atoms and ablation depths were analyzed quantitatively in the two bulks with laser intensity of 400GW/cm2. Propagations of stress wave in the two bulks were also investigated.
  • Keywords
    elemental semiconductors; high-speed optical techniques; laser ablation; molecular dynamics method; silicon; Si; ablation depths; femtosecond laser ablation; laser intensity; molecular dynamics simulation; silicon; stress wave propagation; Atom lasers; Atomic beams; Atomic layer deposition; Electric shock; Simulation; Surface treatment; Laser Ablation; Silicon; molecular dynamics; numerical simulations; stress waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics and Optoelectronics (ICEOE), 2011 International Conference on
  • Conference_Location
    Dalian
  • Print_ISBN
    978-1-61284-275-2
  • Type

    conf

  • DOI
    10.1109/ICEOE.2011.6013271
  • Filename
    6013271
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3211558