Title :
Molecular dynamics simulations of femtosecond laser ablation of silicon
Author :
Wang, Li-Mei ; Zeng, Xinwu
Author_Institution :
Coll. of Optoelectron. Eng., Nat. Univ. of Defense Technol., Changsha, China
Abstract :
Molecular dynamics simulations were carried out to investigate the ablation process of silicon under irradiation of 266nm femtosecond laser. Evolutions of macro-variables were studied and final Profile and movement traces of atoms were obtained in Si(100) with laser intensity of 400GW/cm2. Characteristics of ablation processes of Si(100) and Si(111) were compared. The amount of removal atoms and ablation depths were analyzed quantitatively in the two bulks with laser intensity of 400GW/cm2. Propagations of stress wave in the two bulks were also investigated.
Keywords :
elemental semiconductors; high-speed optical techniques; laser ablation; molecular dynamics method; silicon; Si; ablation depths; femtosecond laser ablation; laser intensity; molecular dynamics simulation; silicon; stress wave propagation; Atom lasers; Atomic beams; Atomic layer deposition; Electric shock; Simulation; Surface treatment; Laser Ablation; Silicon; molecular dynamics; numerical simulations; stress waves;
Conference_Titel :
Electronics and Optoelectronics (ICEOE), 2011 International Conference on
Conference_Location :
Dalian
Print_ISBN :
978-1-61284-275-2
DOI :
10.1109/ICEOE.2011.6013271
