Title :
Fabrication of aligned CNT bundle emitters in different density
Author :
Fei Liu ; Liu, J.B. ; Xie, W.G. ; Ming, W.W. ; Chen, J. ; Deng, S.Z. ; Xu, N.S.
Author_Institution :
Sun Yat-sen Univ., Guangzhou
Abstract :
Aligned CNT bundle emitters in different density are prepared by MPCVD. The reaction pressure is the most important factor, which is responsible for the density of CNT bundles. Based on our results, the etching time of the H2 plasma has much effect on the aligned growth of the CNT bundles. Controlled growth of the aligned CNT bundles in different density is necessary for the application of CNTs in FETs. Further measurements on the FE properties of the CNT bundles in different density are still on research.
Keywords :
carbon nanotubes; field effect transistors; plasma CVD; CNT bundle emitters; FET; MPCVD; aligned growth; carbon nanotubes; different density; filed effect transistor; hydrogen plasma; microwave plasma chemical vapor deposition; Density measurement; Etching; FETs; Fabrication; Hydrogen; Iron; Plasma applications; Plasma density; Plasma measurements; Plasma properties;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4244-1133-7
Electronic_ISBN :
978-1-4244-1134-4
DOI :
10.1109/IVNC.2007.4481022
