DocumentCode
3211608
Title
A new breakdown failure mechanism in HfO2 gate dielectric
Author
Ranjan, R. ; Pey, K.L. ; Tang, L.J. ; Tung, C.H. ; Groeseneken, G. ; Radhakrishnan, M.K. ; Kaczer, B. ; Degraeve, R. ; De Gendt, S.
Author_Institution
Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
fYear
2004
fDate
25-29 April 2004
Firstpage
347
Lastpage
352
Abstract
The breakdown failure mechanism in HfO2 high-k gate dielectrics under constant voltage stress in inversion and accumulation mode is physically analyzed with the aid of high resolution transmission electron microscopy. The results show that the breakdown phenomenon in HfO2 gate dielectrics is different from that of ultrathin SiOxNy and Si3N4 gate dielectrics. Dielectric-breakdown-induced epitaxy, which is the failure defect responsible for breakdown in SiOxNy and Si3N4, has also been observed in HfO2 but in a slightly different morphology. The microstructural damages observed in the breakdown of HfO2 gate dielectrics are probably related to HfSix and HfSiOx formation during BD event.
Keywords
CMOS integrated circuits; dielectric thin films; electric breakdown; hafnium compounds; integrated circuit reliability; permittivity; transmission electron microscopy; HfO2; HfO2 gate dielectric; HfSix; HfSiOx; accumulation mode; breakdown failure mechanism; breakdown phenomenon; constant Voltage stress; dielectric-breakdown-induced epitaxy; failure defect; high resolution transmission electron microscopy; inversion mode; Biomembranes; Dielectric breakdown; Dielectric substrates; Electric breakdown; Failure analysis; Hafnium oxide; Leakage current; MOSFET circuits; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN
0-7803-8315-X
Type
conf
DOI
10.1109/RELPHY.2004.1315350
Filename
1315350
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