DocumentCode
3211838
Title
Reliability evaluation and comparison of Class-E and Class-A power amplifiers with 0.18 μm CMOS technology
Author
Lin, Wei-Cheng ; Du, Long-Jei ; King, Ya-Chin
Author_Institution
Microelectron. Lab., Nat. Tsing-Hua Univ., Hsin-Chu, Taiwan
fYear
2004
fDate
25-29 April 2004
Firstpage
415
Lastpage
416
Abstract
Circuit reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we´ve found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.
Keywords
integrated circuit modelling; integrated circuit reliability; power amplifiers; 0.18 μm CMOS technology; 0.18 micron; Class-A power amplifiers; Class-E power amplifiers; large switch stress voltage; reliability evaluation; CMOS technology; Circuits; Degradation; Power amplifiers; Power generation; Radiofrequency amplifiers; Semiconductor device modeling; Stress; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN
0-7803-8315-X
Type
conf
DOI
10.1109/RELPHY.2004.1315362
Filename
1315362
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