DocumentCode
3211991
Title
Hot carrier reliability of a SiGe/Si hetero-interface in SiGe MOSFETs
Author
Tsuchiya, Toshiaki ; Sakuraba, Masao ; Murota, Junichi
Author_Institution
Interdisciplinary Fac. of Sci. & Eng., Shimane Univ., Matsue, Japan
fYear
2004
fDate
25-29 April 2004
Firstpage
449
Lastpage
454
Abstract
In this paper we report for the first time a mechanism whereby hetero-interface traps are generated by hot carriers in a SiGe/Si heterostructure. The trap density is estimated for SiGe-channel MOSFETs using a newly established elaborate low-temperature charge pumping technique. These results will enable a new level of improvements to the performance and reliability of strained-Si and SiGe devices.
Keywords
Ge-Si alloys; MOSFET; defect states; hot carriers; interface states; semiconductor device reliability; semiconductor heterojunctions; silicon; SiGe MOSFETs; SiGe-Si; SiGe/Si hetero-interface; hetero-interface traps; hot carrier reliability; hot carriers; low-temperature charge pumping technique; trap density; Charge measurement; Charge pumps; Current measurement; Germanium silicon alloys; Hot carriers; MOSFETs; Pulse measurements; Silicon germanium; Stress; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN
0-7803-8315-X
Type
conf
DOI
10.1109/RELPHY.2004.1315370
Filename
1315370
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