Title :
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels
Author :
Meneghesso, G. ; Levada, S. ; Zanoni, E. ; Salviati, G. ; Armani, N. ; Rossi, F. ; Pavesi, M. ; Manfredi, Marco ; Cavallini, A. ; Castaldini, A. ; Du, S. ; Eliashevich, I.
Author_Institution :
Dept. of Inf. Eng., Padova Univ., Italy
Abstract :
In this work we report on a reliability study carried out over InGaN/GaN LEDs. Accelerated life tests have been carried out at various biasing current levels and at various temperature. Failure modes have been identified and correlated with the instability of Magnesium as dopant in the p-layer and with the worsening of the efficiency of the quantum well in active layer.
Keywords :
III-V semiconductors; deep levels; doping profiles; gallium compounds; hydrogen; indium compounds; light emitting diodes; magnesium; semiconductor device breakdown; semiconductor device reliability; semiconductor doping; wide band gap semiconductors; GaN-based LEDs; InGaN-GaN; InGaN/GaN LEDs; active layer; biasing current levels; deep levels; doping profile; failure mechanisms; instabilities; quantum well; Degradation; Doping profiles; Failure analysis; Gallium nitride; III-V semiconductor materials; Life estimation; Life testing; Light emitting diodes; Physics; Temperature;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315374
