A method for measuring substrate noise in the UWB frequency band on lightly doped substrates

Author

Shen, Ming ; Tong, Tian ; Mikkelsen, Jan Hvolgaard ; Larsen, Torben

Author_Institution

Aalborg Univ., Aalborg

fYear

2007

fDate

19-20 Nov. 2007

Firstpage

1

Lastpage

4

Abstract

A measurement method for characterizing the substrate noise over the ultra-wideband (UWB) frequency band in UWB systems implemented using lightly doped CMOS processes is presented. The measurement structure in this method is based on modified ground-signal-ground (GSG) pads. In addition, the effects of the distance-based substrate resistance and the capacitive coupling between the substrate and the ground of the measurement setup are evaluated by on-wafer measurement of a test chip fabricated in a 0.18 mum lightly doped CMOS process. An equivalent circuit model of the presented measurement structure is given and shows accurate fit. From the measurement results the presented method is shown to provide a measurement band from 3 GHz to 10 GHz. To further validate the usability of the method a practical class-E PA is used.

Keywords

CMOS integrated circuits; noise measurement; substrates; ultra wideband technology; UWB system; capacitive coupling; complementary metal-oxide-semiconductor; distance-based substrate resistance; doped CMOS process; doped substrate; equivalent circuit model; ground-signal-ground; on-wafer measurement; substrate noise characterization; substrate noise measurement; ultra-wideband frequency band; CMOS process; Circuit testing; Coupling circuits; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Noise measurement; Optical coupling; Semiconductor device measurement; Ultra wideband technology; UWB; substrate noise; wide band measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Norchip, 2007

Conference_Location

Aalborg

Print_ISBN

978-1-4244-1516-8

Electronic_ISBN

978-1-4244-1517-5

Type

conf

DOI

10.1109/NORCHP.2007.4481057

Filename

4481057