Title :
Electromigration reliability enhancement of flip chip interconnects using Cu-doped SnPb solder
Author :
Wu, J.D. ; Lee, C.W. ; Wu, S.Y. ; Li, Simon
Author_Institution :
Stress & Reliability Lab., Adv. Semicond. Eng., Inc., Kaohsiung, Taiwan
Abstract :
This work investigates electromigration resistance of three solder bump compositions, i.e. Sn63Pb37, SnPbCu, and SnPbNi. FCBGA with Cu-doped SnPb interconnects are observed to have 3.5-fold improvement in characteristic life (t63) than that of FCBGA using eutectic SnPb solder. On the other hand, significant reliability degradation (55%) is obtained when employing Ni-doped SnPb solder.
Keywords :
ball grid arrays; copper alloys; electromigration; flip-chip devices; integrated circuit interconnections; integrated circuit metallisation; lead alloys; nickel alloys; semiconductor device reliability; soldering; tin alloys; Cu-doped SnPb solder; FCBGA; Sn63Pb37; Sn63Pb37; SnPbCu; SnPbNi; characteristic life; electromigration reliability enhancement; electromigration resistance; flip chip interconnects; reliability degradation; solder bump compositions; Anodes; Electric resistance; Electrical resistance measurement; Electromigration; Flip chip; Integrated circuit interconnections; Packaging; Semiconductor device reliability; Stress; Temperature;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315391
