Title :
Super Stack technique to reduce leakage power for sub 0.5-V supply voltage in VLSI circuits
Author :
Reddy, T.G. ; Suganthi, K.
Author_Institution :
Electron. & Commun. Dept., SRM Univ., Chennai, India
Abstract :
Leakage current of CMOS circuits has become a major factor in very deep submicron regime. ITRS reports that leakage power dissipation is rapidly becoming a substantial contributor to the total power dissipation as threshold voltage becomes small. In this paper a leakage reduction technique named "Super stack"for sub 0.5-V supply voltage has been proposed. Super Stack technique comes in handy where Multithreshold techniques fail to apply for 0.5-V or lower supply voltages. The proposed method can be used in sub 0.5 V supply voltage for reducing the leakage power in active mode and standby mode while reducing the delay.
Keywords :
CMOS integrated circuits; VLSI; leakage currents; power integrated circuits; CMOS circuits; VLSI circuits; leakage current; leakage power dissipation; leakage reduction technique; multithreshold techniques; reduce leakage power; super Stack technique; supply voltage; threshold voltage; total power dissipation; voltage 0.5 V; Dynamic Power; Forced Stack; Leakage power; Multithreshold; SCCMOS;
Conference_Titel :
Sustainable Energy and Intelligent Systems (SEISCON 2011), International Conference on
Conference_Location :
Chennai
DOI :
10.1049/cp.2011.0428