• DocumentCode
    3212427
  • Title

    Super Stack technique to reduce leakage power for sub 0.5-V supply voltage in VLSI circuits

  • Author

    Reddy, T.G. ; Suganthi, K.

  • Author_Institution
    Electron. & Commun. Dept., SRM Univ., Chennai, India
  • fYear
    2011
  • fDate
    20-22 July 2011
  • Firstpage
    585
  • Lastpage
    588
  • Abstract
    Leakage current of CMOS circuits has become a major factor in very deep submicron regime. ITRS reports that leakage power dissipation is rapidly becoming a substantial contributor to the total power dissipation as threshold voltage becomes small. In this paper a leakage reduction technique named "Super stack"for sub 0.5-V supply voltage has been proposed. Super Stack technique comes in handy where Multithreshold techniques fail to apply for 0.5-V or lower supply voltages. The proposed method can be used in sub 0.5 V supply voltage for reducing the leakage power in active mode and standby mode while reducing the delay.
  • Keywords
    CMOS integrated circuits; VLSI; leakage currents; power integrated circuits; CMOS circuits; VLSI circuits; leakage current; leakage power dissipation; leakage reduction technique; multithreshold techniques; reduce leakage power; super Stack technique; supply voltage; threshold voltage; total power dissipation; voltage 0.5 V; Dynamic Power; Forced Stack; Leakage power; Multithreshold; SCCMOS;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Sustainable Energy and Intelligent Systems (SEISCON 2011), International Conference on
  • Conference_Location
    Chennai
  • Type

    conf

  • DOI
    10.1049/cp.2011.0428
  • Filename
    6143376